2 edition of Studies of electrical properties of Cu/SiO thin films. found in the catalog.
Studies of electrical properties of Cu/SiO thin films.
Jian Ping Li
|Contributions||Brunel University. Department of Physics.|
|The Physical Object|
|Number of Pages||121|
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In this paper, effects of Fe and Cu doping on the physical properties of InxCrMxO3 (M = Fe, Cu) thin films prepared by sol-gel method followed by spin-coating technique were investigated.
Copper oxides (CuO, Cu 2 O) have promising application potential in sensors or solar cells. In this study, copper oxide thin films were prepared by reactive DC magnetron sputtering using helicon plasma.
A pure copper target was sputtered with Ar gas in an O 2 atmosphere with a DC sputtering power in the range of 10–40 W, while the other fabrication conditions were kept : Anmar H.
Shukor, Haider A. Alhattab, Ichiro Takano. Insulator Materials for Interface Passivation of Cu(In,Ga)Se 2 Thin Films Abstract: In this work, metal-insulator-semiconductor structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al 2 O 3), silicon nitride, and silicon oxide (SiO x) to be used as passivation layers in Cu(In,Ga)Se 2 (CIGS) thin Cited by: 8.
Topics: 20K - Solid-state physics, Studies of electrical properties of Cu/SiO thin films [ Thin films of Cu/SiO]Author: J.P Li. 14 hours ago The citrate sol–gel method was utilized for the fabrication of copper-containing films sensitive to NO2 gas.
Effect of annealing temperature on the film phase composition, morphology, and sensor response was studied. X-ray diffraction reveals the formation of Cu2Cl(OH)3 phase at °C and the CuO phase at and °C. It was found out that the films annealed at °C and. Highlights Deposition and growth of Cu thin film on Si(0 0 1) substrate is studied using molecular dynamics simulations.
Tersoff potential parameters for the interaction of Cu and Si atoms are fitted. Growth mode, crystalline structure and orientation, and surface morphology of Cu thin film are investigated. Effect of substrate temperature on crystalline orientation and surface roughness of Cu.
Here, the nanoscale electrical properties of epitaxial Cu 3 Ge thin film are found to be governed by localized film morphologies and the resistance between two points on the film.
Morphological study indicated that the large grain appeared on the surface of thin films at higher selenium source temperature. The band gap of thin films linearly decreased with the increase of Se concentration. The as-prepared Cu 3 Sb(S x,Se 1-x) 4 thin film showed p-type electrical behavior and an obvious photoconductivity.
Hole conducting, optically transparent Cu 2 O thin films on glass substrates have been synthesized by vacuum annealing (5×10 −6 mbar at K for 1 hour) of magnetron sputtered (at K) CuO thin films.
The Cu 2 O thin films are p-type and show enhanced properties: grain size ( nm), optical transmission 72% (at nm) and Hall mobility. Presently, there are few studies on the structural and electrical properties of Cu 2−x Te thin films deposited by magnetron sputtering.
Moreover, as noted by Mendoza et al. [ 9 ], the reported optical properties are not in full agreement and show discrepancies and variations regarding the optical constants [ , ,  ]. X-ray photoelectron spectroscopy has been used to study the chemical structure of stoichiometric SiO thin films.
The Si 2p line of silicon binding energy is found at eV, and deconvoluted spectra show that at least four distributions of the type Si-(Si 4-y O y) exist in the result is consistent with a random-binding model but differ from it for quantitative distribution.
To achieve a high capacitance density for embedded decoupling capacitor applications, the aerosol deposition (AD) process was applied as a thin film deposition process. BaTiO3 films were fabricated on Cu substrates by the AD process at room temperature, and the film thickness was reduced to confirm the limit of the critical minimum thickness for dielectric properties.
Finally, the as-fabricated CFTS thin films were sulfurized and the photo-electrical properties were examined. From these studies, it is Studies of electrical properties of Cu/SiO thin films.
book that the electrical bistability vanishes after sulfurization. However, the photo-response of the sulfurized sample is improved when compared to its counterpart. Solid State Ionics () North-Holland SOLID STATE IONICS Electrical properties of amorphous lithium electrolyte thin films J.B.
Bates, N.J. Dudney, G.R. Gruzalski, R.A. Zuhr, A. Choudhury, C.F. Luck Oak Ridge National Laboratory, Oak Ridge, TennesseeLISA and J.D. Robertson UniversityofKentucky, Lexington, KentuckyUSA The impedance of xLizO~yS'O2-zPz05 thin.
Electrical conduction in Cu-SiO/TiO-Cu thin film structures has been investigated. Prior to electroforming, the d.c. conduction showed a behaviour of the form log l c ∞(V b) 1/2 where l c is the circulating current and V b is the applied voltage.
At low applied voltages the a.c. conductivity obeyed the relation σ AC ∞f n (n= at K). After electroforming, the samples showed voltage. Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties.
Thin Solid Films. ; – Nichterwitz M, Abou-Ras D, Sakurai K, Bundesmann J, Unold T, Scheer R, Schock HW. Influence of grain boundaries on current collection in Cu(In,Ga)Se2 thin-film solar cells.
Thin Solid. Electrical properties. The temperature dependence of dc electrical resistivity of thin films of silver nanoparticles in the temperature range K has been shown in Figure 5.
It is evident from the figure that the resistivity decreases with increase in temperature, which shows the semiconducting nature of the sample. Therefore the sum of R c and R i equals the y-intercept (i.e. GΩ), and the measured Cu 3 Ge thin film resistance (R s) is linearly relevant to the distance: R s = ρl/A, where l is the distance between two electrodes, A is the cross-sectional area for current to go through, and ρ is the resistivity of epitaxial Cu 3 Ge thin film.
Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application To cite this article: Mohit et al Jpn. Appl. Phys. 59 SMMB02 View the article online for updates and enhancements. The objective of this work is study the effect of Al doping on physical properties of ZnS thin films.
Undoped and Al-doped ZnS films were deposited by. The films of relatively low nitrogen content (copper silicide between Si and Cu during annealing. Ta 43 Si 4 N 53 thin film is readily crystallized into TaN x in spite of a remarkable chemical stability with Cu. Adelifard, H.
Eshghi, and M. Mohagheghi, “An investigation on substrate temperature and copper to sulphur molar ratios on optical and electrical properties of nanostructural CuS thin films prepared by spray pyrolysis method,” Applied Surface Science, vol.no.
15, pp. –, Structural and optical characterization of 2D layered materials. a STEM cross-sectional image of transferred h-BN. The scale bar is 5 nm. b Raman spectra of MoS 2 on 30 nm SiO 2 on Si substrate.
This study investigates the characteristics of laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass. The samples are synthesized using simple sol–gel, spin coating and radio frequency magnetron sputtering methods.
The studies on the structural, optical and electrical. Optical, structural, and electrical properties of Cu2O thin films Glancing-angle deposition (GLAD) was used in this work to grow transparent oxide Cu2O thin films by annealing in air at °C of copper films deposited firstly by this method onto glass substrates.
Although some aspects of electrical properties (resistivity, mobility, carrier density etc.) of Ni-doped CuO thin film has been reported earlier [16,18], so far, there is no detailed study of ac.
Copper oxide (Cu x O) thin films were fabricated on SiO 2 /Si substrates by using a solution process. The coated Cu x O gel films were treated using a vacuum annealing method at various temperatures (– °C). X-ray diffraction results indicated that the vacuum annealing technique was effective in transforming CuO into Cu 2 O.
Atomic force microscopy images showed that the mean grain. Methods. SiO x films and (SiO x /SiO y) junctions were obtained by HFCVD technique in the range of temperatures from °C to 1,°C and deposited on quartz and n-type silicon () substrates with 1 to 10 Ω cm resistivity, using quartz and porous silicon as the reactive deposition time was 5 min for the SiO x films and of 10 min for the (SiO x /SiO y) junctions due to that.
3) thin films by atomic layer deposition technique and their various structural, optical and electrical characterizations. Introduction Many materials were identified as high-k materials that have higher dielectric constant than SiO 2 but not many are compatible with the Si substrate that is used in most of the semiconductor devices.
Important. Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates Article (PDF Available) in Thin Solid Films () June We have conducted in situ measurements of the surface plasmons and electrical resistivity of noble metal thin films.
We present results for the electrical resistivity of these materials as functions of the angle of incidence for p-polarized light of wavelength λ = nm in the Kretschmann configuration optical system.
We observe a significantly lower resistivity (higher conductivity) under. The electrical and optical properties of the CuO films were modified by Ni doping, i.e.
the band gap decreased and the mobility increased almost linearly, with the exception of the 10 % Ni-doped sample. SEM images of a undoped b 2 % c 4 % d 6 %, and e 10 % Ni-doped CuO thin films.
Studies on Structural, Optical and Electrical Properties of Zno Thin Films Prepared by the Spray Pyrolysis Method. Figs show the plots of intensity (in arbitrary unit) against 2θ. The result indicates that the films have a polycrystalline hexagonal wurtzite structure with (1.
We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS).
Atomic force microscopy measurements on films deposited at different substrate temperatures (up to °C) yielded activation energy of 12 kJ/mole for the. The deposition of high-quality SiO 2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H 2 Si[N(C 2 H 5) 2] 2 as a Si precursor.
We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO 2 prepared under. In thin films, diffusion phenomena play an important role for the growth process, and in the understanding of the mechanical, electrical and magnetic properties.
The change in the concentration profile due to the interdiffusion by annealing was investigated using Auger electron spectroscopy depth‐profiling technique on Pd/Cu multilayered films. It was observed that the initial.
To fulfill this goal, freestanding processes have been proposed, in which wet etching of inserted sacrificial layers is regarded as one of the most efficient ways to obtain epitaxial high-quality thin films.
In this study, we propose using an alternative oxide, YBa2Cu3O7 (YCBO), as a sacrificial layer, which can be easily dissolved in light.
The thickness effect of CuO thin films on electrical and gas sensing properties Sameer Atta Maki & Ons Ahmed Mahmoud Collage of education for pure science Ibn AL-Haitham university of Baghdad, Iraq Abstract— Copper Oxide (CuO) thin films was prepared by thermal evaporation using Oxidation thermal at different thickness ()nm.
Control of the growth orientation and electrical properties of polycrystalline Cu 2 O thin films by group-IV elements doping Appl. Phys. Lett. 85, (); / It was found that at the temperatures typically used for deposition, between approximately and K, a manganese silicate layer grows first upon reaction with the top SiO 2 surface, and a thin manganese silicide film develops latter at the SiO 2 /Si() interface.
The performance of these structures, of the silicide in particular, in. The XRD patterns of AZO and GZO thin films at different Al and Ga doping concentration annealed at °C in air for h are shown Figure1a,b, respectively.
All of the undoped, Al- and Ga-doped ZnO thin films were polycrystalline and have a hexagonal wurtzite crystal structure.As shown in Figure1a, the AZO thin films show a preferentially c-axis orientation normal to .Qualitative and quantitative studies of the oxidation of polycrystalline copper (Cu) thin films upon exposure to ambient air conditions for long periods (on the order of several months) are reported in this work.
Thin films of Cu, prepared by thermal evaporation, were analyzed by means of X-ray photoelectron spectroscopy (XPS) to gain an understanding on the growth mechanism of the surface.Cuprous oxide (Cu 2 O) is a p-type semiconductor with high optical absorption and a direct bandgap of about eV, making it an attractive material for photovoltaic applications.
For a high-performance photovoltaic device, the formation of low-resistivity contacts on Cu 2 O thin films is a prerequisite, which can be achieved by, for instance, nitrogen doping of Cu 2 O in order to increase the.